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onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules

onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules are 1200V, 80mΩ 3-phase bridge power modules housed in a Dual Inline Package (DIP). These SiC modules are compactly designed to have low total module resistance. The NVXK2VR80WxT2 power modules are automotive-qualified per AEC-Q101 and AQG324. These power modules are lead-free and ROHS, UL94V-0 compliant. The NVXK2VR80WxT2 SiC modules' temperature sensing and the lowest thermal resistance make them ideal for PFC onboard chargers in xEV applications.

Features

  • DIP Silicon Carbide (SiC) 3-phase bridge power module
  • 1200V drain to source voltage (VDSS)
  • 20A continuous drain current (ID) - (NVXK2VR80WDT2)
  • 31A continuous drain current (ID) - (NVXK2VR80WXT2)
  • 80mΩ (typical) drain to source on-resistance (RDS(ON))
  • -55°C to 175°C operating Junction temperature (TJ) range
  • Creepage and clearance per IEC60664−1 and IEC 60950−1
  • Compact design for low total module resistance
  • Module serialization for full traceability
  • Lead-free
  • RoHS and UL94V-0 compliant
  • Automotive qualified per AEC-Q101 and AQG324

Applications

  • PFC for on-board charger in xEV applications
  • 11kW to 22kW on-board charger for EV-PHEV

SiC MOSFET 3-Phase Bridge Module

onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules

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Numer części Karta charakterystyki Id – Ciągły prąd drenu Pd – strata mocy Rds On – rezystancja dren–źródło Vds – Napięcie przebicia dren–źródło Vgs – Napięcie bramka–źródło Vgs th – Napięcie progowe bramka–źródło Liczba kanałów Czas narastania Czas zanikania Długość Szerokość Wysokość Opakowanie/obudowa Opakowanie RoHS – Mouser
NVXK2VR80WDT2 NVXK2VR80WDT2 Karta charakterystyki 20 A 82 W 116 mOhms 1.2 kV - 15 V, + 25 V 4.3 V 6 Channel 12 ns 9 ns 44.2 mm 29 mm 5.8 mm APM-32 Tube Y
NVXK2VR80WXT2 NVXK2VR80WXT2 Karta charakterystyki 31 A 208 W 116 mOhms 1.2 kV - 15 V, + 25 V 4.3 V 6 Channel 12 ns 9 ns 44.2 mm 29 mm 5.8 mm APM-32 Tube Y
Opublikowano: 2024-08-06 | Zaktualizowano: 2024-08-28