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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET is designed with demanding power and automotive applications in mind. Built on onsemi’s advanced MOSFET technology, the NVBYST0D8N08X balances low conduction losses with rugged switching performance, making the device a solid choice for designs that need both efficiency and durability. The MOSFET is optimized for high‑voltage operation and withstands the fast switching and high-current stresses commonly encountered in power conversion, motor control, and load-switching circuits.
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onsemi NVBYST0D8N08X Single N-Channel Power MOSFETOptimized for high‑voltage operation and withstands fast switching and high-current stresses.14.04.2026
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ROHM Semiconductor High-Density SiC Power ModulesTRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.10.04.2026 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.07.04.2026 -
onsemi NTMFD0D9N02P1E MOSFETDual N-channel MOSFET designed with low Rg for fast switching applications.06.04.2026 -
Vishay Moduł mocy MOSFET VS-HOT200C080 200 A 80 VThis device reduces board space requirements by up to 15% compared to standard discrete solutions.02.04.2026 -
Toshiba N-Channel/P-Channel Power MOSFETsIdeal for high-speed switching, power management switches, DC-DC converters, and motor drivers.31.03.2026 -
STMicroelectronics STL059N4S8AG Power MOSFETA 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.31.03.2026 -
Infineon Technologies OptiMOS™ 6 60V Power MOSFETsDelivers superior performance to OptiMOS 5 via robust power MOSFET technology.27.03.2026 -
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETsApplication-optimized performance, enabling peak performance for data centers, servers, & AI.27.03.2026 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.24.03.2026 -
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.20.03.2026 -
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded ModulesFeatures 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.17.03.2026 -
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional SwitchesThese devices are a great fit for serving as battery disconnect switches in various applications.17.03.2026 -
Infineon Technologies OptiMOS™ 8 Power MOSFETsThese are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].17.03.2026 -
onsemi NVMFD5873NL Dual N-Channel Power MOSFETsDesigned for compact and efficient designs, including high thermal performance.13.03.2026 -
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.10.03.2026 -
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.10.03.2026 -
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.10.03.2026 -
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFETSupports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.10.03.2026 -
Qorvo QPD2560L 300W GaN/SiC HEMTDesigned for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.09.03.2026 -
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFETSupports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.06.03.2026 -
EPC EPC2302 Enhancement-Mode GaN Power TransistorEngineered for high-frequency DC-DC applications and 48V BLDC motor drives.05.03.2026 -
EPC EPC2304 Enhancement-Mode GaN Power TransistorHandles tasks where ultra-high switching frequency and low on-time are advantageous.05.03.2026 -
EPC EPC2305 Enhancement-Mode GaN Power TransistorOffers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.05.03.2026 -
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.05.03.2026