Nowe Tranzystory JFET
onsemi TF412 N-Channel JFET is designed for low-frequency general-purpose amplifiers and impedance converter applications. The onsemi TF412 operates at a maximum voltage of 30V and a current of 10mA, with an impressively small input gate-source leakage current (IGSS) of -1.0nA (VGS = -20V, VDS = 0V) and a typical input capacitance (Ciss) of 4pF (VDS = 10V, VGS = 0V, f = 1MHz). Encased in an ultrasmall SOT-883 package (1.0mm × 0.6mm × 0.4mm), this onsemi JFET supports product miniaturization and complies with halogen-free environmental standards, making it an excellent choice for compact and eco-friendly designs.
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onsemi TF412 N-Channel JFETDesigned for low-frequency general-purpose amplifiers and impedance converter applications.05.03.2025
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onsemi Combo-FETsDevices that combine a low RDS(on) SiC JFET with a Si MOSFET in a single, compact package.26.11.2024 -
InterFET Tranzystory JFET IFN201 i IFN202 40 V z kanałem typu N i niską pojemnością wejściowąFeature low gate leakage, low input capacitance (Ciss), and high radiation tolerance.28.10.2024 -
InterFET Tranzystory JFET IFN160 50V z kanałem typu N i niską pojemnością wejściowąCharakteryzują się niskim wyciekiem bramki, niskim napięciem odcięcia i niską pojemnością wejściową (Ciss).28.10.2024 -
onsemi UJ4N 750V 4.3mΩ Normally On SiC JFET TransistorThis JFET exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package.24.10.2024 -
onsemi UG4SC 750V 8.4mΩ Combo-FETsCombines a 750V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package.07.10.2024 -
onsemi UF3N120007K4S 1200V JFET N-Channel TransistorThis device exhibits ultra-low on-resistance [RDS(ON)] in a TO247-4 package.19.09.2024 -
Linear Integrated Systems Low Noise Dual N-Channel JFETsWideband, high gain, monolithic dual, N-channel JFETs that are pin-for-pin replacements.21.09.2023