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Qorvo QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.

Specifications

  • 2.5GHz to 5GHz operating frequency range
  • 48V operating drain voltage
  • 8.7W maximum output power (PSAT) at 3.6GHz
  • 72.9% maximum drain efficiency at 3.6GHz
  • 18.8dB efficiency-tuned P3dB gain at 3.6GHz
  • 4.5mm x 4.0mm DFN package

Applications

  • WCDMA / LTE
  • Macrocell base station
  • Microcell base station
  • Small cell
  • Active antenna
  • 5G massive MIMO
  • General-purpose applications

Videos

Additional Resource

Associated Transistors

Qorvo GaN Transistor Solutions for Sub 6GHz 5G

A broad portfolio of gallium nitride (GaN) discrete transistor products.

Learn Moreo Qorvo GaN Transistor Solutions for Sub 6GHz 5G View Productspowiązany z Qorvo GaN Transistor Solutions for Sub 6GHz 5G

Qorvo QPD0007 GaN RF Transistors

Single-stage unmatched transistors capable of delivering P3dB output power of 20W at +48V operation.

Learn Moreo Qorvo QPD0007 GaN RF Transistors View Productspowiązany z Qorvo QPD0007 GaN RF Transistors

Associated Board

Qorvo QPD0005 Evaluation Board

Designed to evaluate QPD0005 GaN single-stage, unmatched SiC RF transistors.

Learn Moreo Qorvo QPD0005 Evaluation Board View Productspowiązany z Qorvo QPD0005 Evaluation Board
Opublikowano: 2020-09-22 | Zaktualizowano: 2024-08-26