onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET

onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET offers an M3S planar technology for fast-switching applications in a D2PAK-7L package. This MOSFET features 650V drain-to-source voltage, 40A continuous drain current, 263W power dissipation, and 216A pulsed drain current. The NTBG023N065M3S MOSFET integrates an ultra-low gate charge and high-speed switching MOSFET with low capacitance (Coss = 153pF). This MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche-tested. The NTBG023N065M3S MOSFET is Halide-free and RoHS compliant with a 7a exemption. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, UPS, energy storage, and EV charging infrastructure.

Features

  • 650V drain-to-source voltage
  • 23mΩ typical @VGS = 18V
  • Ultra-low gate charge (QG(tot) = 69nC)
  • High-speed switching with low capacitance (Coss = 153pF)
  • -8V/+22V gate-to-source voltage
  • 40A continuous drain current
  • 263W power dissipation
  • -55°C to 175°C operating junction temperature range
  • 100% avalanche tested
  • Halide-free
  • RoHS compliant with exemption 7a
  • Pb-free 2LI (on second-level interconnection)

Applications

  • Switching Mode Power Supplies (SMPS)
  • Solar inverters
  • UPS
  • Energy storages
  • EV charging infrastructure

Dimension Diagram

Mechanical Drawing - onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET
Opublikowano: 2024-07-31 | Zaktualizowano: 2024-08-22