STMicroelectronics N-Channel MDmesh K6 Power MOSFETs
STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.
Features
- MDmesh K6 technology
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Specifications
- 800V minimum drain-source breakdown voltage
- ±30V gate-source voltage
- 5V/ns peak diode recovery voltage slope
- 100A/µs peak diode recovery current slope
- 120V/ns MOSFET dv/dt ruggedness
- -55°C to 150°C operating junction temperature range
Applications
- Notebook and AIO
- Flyback converters
- Adapters for tablets
- LED lighting
Test Circuits
Associated MOSFETs
STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET
High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology.
STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET
Uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology.
STMicroelectronics STD80N450K6 800V 10A MDmesh K6 Power MOSFET
High voltage N-channel Power MOSFET featuring Zener protection and 100% avalanche.
STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET
Based on MDmesh K6 technology offers an ultra-low gate charge and excellent RDS(on) x area.
STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFET
Features an excellent RDS(on) x area and a low Qg, enabling high switching speeds and low losses.
STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET
Offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology.
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.
COMPLETE YOUR DESIGN
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
| Numer części | Karta charakterystyki | Styl mocowania | Opakowanie/obudowa | Id – Ciągły prąd drenu | Rds On – rezystancja dren–źródło | Qg – ładunek bramki | Pd – strata mocy | Tryb kanału | Opakowanie | Czas zanikania | Czas narastania | Typowy czas opóźnienia wyłączenia | Typowy czas opóźnienia włączenia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STD80N340K6 |  |
SMD/SMT | DPAK-3 (TO-252-3) | 12 A | 340 mOhms | 17.8 nC | 92 W | Enhancement | Reel | 11 ns | 4.9 ns | 34 ns | 13 ns |
| STF80N240K6 | |
Through Hole | TO-220FP-3 | 16 A | 220 mOhms | 25.9 nC | 27 W | Enhancement | Tube | 12 ns | 5.3 ns | 47.8 ns | 16 ns |
| STF80N1K1K6 | |
Through Hole | TO-220FP-3 | 5 A | 1.1 Ohms | 5.7 nC | 21 W | Enhancement | Tube | 14 ns | 4.3 ns | 22 ns | 7.4 ns |
| STF80N600K6 | |
Through Hole | TO-220FP-3 | 7 A | 600 mOhms | 10.7 nC | 23 W | Enhancement | Tube | 12.6 ns | 4.1 ns | 28.2 ns | 9 ns |
| STD80N240K6 | |
SMD/SMT | 16 A | 220 Ohms | 25.9 nC | 105 W | Enhancement | Reel | |||||
| STD80N450K6 | |
SMD/SMT | DPAK-3 (TO-252-3) | 10 A | 450 mOhms | 17.3 nC | 83 W | Enhancement | Reel | 12.7 ns | 4 ns | 28.8 ns | 10.6 ns |
| STP80N1K1K6 | |
Tube | |||||||||||
| STP80N600K6 | |
Through Hole | TO-220-3 | 7 A | 600 mOhms | 10.7 nC | 86 W | Enhancement | Tube | 12.6 ns | 4.1 ns | 28.2 ns | 9 ns |
| STP80N450K6 | |
Through Hole | TO-220-3 | 10 A | 450 mOhms | Enhancement | Tube | ||||||
| STP80N240K6 | |
Through Hole | TO-220-3 | 10 A | 220 mOhms | 25.9 nC | 140 W | Enhancement | Tube | 12 s | 5.3 ns | 47.8 ns | 16 ns |