Powrót do: SemiQ

SemiQ GEN3 1200V SiC MOSFET Power Modules

SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [RDS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.

Features

  • High-speed switching SiC MOSFETs
  • Freewheeling SiC SBD with zero reverse recovery (COPACK - GCMS series)
  • All parts tested to greater than 1400V
  • Kelvin reference for stable operation
  • Isolated backplate
  • Low switching losses
  • Low junction to case thermal resistance

Applications

  • Photovoltaic inverters
  • Battery chargers
  • Server power supplies
  • Energy storage systems

Videos

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View Results ( 8 ) Page
Numer części Karta charakterystyki Rds On – rezystancja dren–źródło Id – Ciągły prąd drenu Vf – Napięcie przewodzenia Czas narastania Czas zanikania Pd – strata mocy
GCMS008C120S1-E1 GCMS008C120S1-E1 Karta charakterystyki 12 mOhms 189 A 2.03 V 35 ns 34 ns 536 W
GCMS016C120S1-E1 GCMS016C120S1-E1 Karta charakterystyki 23 mOhms 103 A 2.2 V 26 ns 27 ns 303 W
GCMS040C120S1-E1 GCMS040C120S1-E1 Karta charakterystyki 52 mOhms 53 A 2.15 V 7 ns 33 ns 183 W
GCMS080C120S1-E1 GCMS080C120S1-E1 Karta charakterystyki 100 mOhms 28 A 2.27 V 4 ns 31 ns 118 W
GCMX008C120S1-E1 GCMX008C120S1-E1 Karta charakterystyki 12 mOhms 188 A 3.8 V 36 ns 28 ns 536 W
GCMX016C120S1-E1 GCMX016C120S1-E1 Karta charakterystyki 23 mOhms 103 A 3.8 V 23 ns 20 ns 303 W
GCMX040C120S1-E1 GCMX040C120S1-E1 Karta charakterystyki 52 mOhms 53 A 3.7 V 7 ns 29 ns 183 W
GCMX080C120S1-E1 GCMX080C120S1-E1 Karta charakterystyki 100 mOhms 28 A 3.7 V 4 ns 26 ns 118 W
Opublikowano: 2025-04-28 | Zaktualizowano: 2025-08-12