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ROHM Semiconductor SH8K Dual Nch+Nch Power MOSFETs

ROHM Semiconductor SH8K Dual Nch+Nch Power MOSFETs feature two 40V or 60V MOSFETs in a small, surface-mount SOP8 package with eight terminals. The SH8K series offers low on-resistance and maximum RDS(on) of 8.4mΩ, 12.4mΩ, or 19.4mΩ. Other features are 2W power dissipation and ±8.5A, ±10.5, or ±13.5A drain current ID. These RoHS-compliant MOSFETs are halogen free and use Pb-free plating. ROHM Semiconductor SH8K Dual Nch+Nch Power MOSFETs are ideally suited for switching applications.

Features

  • Dual Nch+Nch polarity
  • 8 terminals
  • Low on-resistance
  • Small surface-mount package (SOP8)
  • Ideal for switching applications
  • Pb-free plating
  • RoHS compliant
  • Halogen free

Specifications

  • 40V or 60V drain source voltage (VDSS)
  • 8.4mΩ, 12.4mΩ, or 19.4mΩ RDS(on) maximum
  • ±8.5A, ±10.5, or ±13.5A drain current ID
  • 2W power dissipation

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View Results ( 6 ) Page
Numer części Karta charakterystyki Vds – Napięcie przebicia dren–źródło Id – Ciągły prąd drenu Rds On – rezystancja dren–źródło Qg – ładunek bramki
SH8KB7TB1 SH8KB7TB1 Karta charakterystyki 40 V 13.5 A 8.4 mOhms 27 nC
SH8KE6TB1 SH8KE6TB1 Karta charakterystyki 100 V 4.5 A 58 mOhms 6.7 nC
SH8KE7TB1 SH8KE7TB1 Karta charakterystyki 100 V 8 A 20.9 mOhms 19.8 nC
SH8KA4TB1 SH8KA4TB1 Karta charakterystyki 30 V 9 A 21.4 mOhms 15.5 nC
SH8KB6TB1 SH8KB6TB1 Karta charakterystyki 40 V 8.5 A 19.4 mOhms 10.6 nC
SH8KC7TB1 SH8KC7TB1 Karta charakterystyki 60 V 10.5 A 12.4 mOhms 22 nC
Opublikowano: 2021-06-30 | Zaktualizowano: 2023-09-07