Powrót do: ROHM Semiconductor

ROHM Semiconductor SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Features

  • Fast switching with low loss
    • Lower switching loss enables high-frequency operation
    • Switching loss is significantly reduced compared to similarly rated IGBT modules
  • Integrated thermistor prevents excessive heat generation
  • +175°C maximum junction temperature
  • Positive RDS(on) coefficient enables easy parallel operation
  • No tail current during turn-off
  • 1700V VDSS
  • ID rated from 80A to 600A
  • 3rd gen trench technology delivers low input capacitance (Ciss) and low gate charge (Qg)
  • 2nd gen planar technology provides longer short-circuit withstand time
  • No limitations on the use of the body diode

Applications

  • Inverters for induction heating
  • Motor drive inverters
  • Bidirectional converters
  • Solar inverters
  • Power conditioners

Switching Loss Comparison

Chart - ROHM Semiconductor SiC Power Modules

Videos

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View Results ( 16 ) Page
Numer części Karta charakterystyki Opis Pd – strata mocy
BSM300C12P3E201 BSM300C12P3E201 Karta charakterystyki MOSFET Modules 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET 1.36 kW
BSM120D12P2C005 BSM120D12P2C005 Karta charakterystyki MOSFET Modules Mod: 1200V 120A (w/ Diode) 935 W
BSM180D12P3C007 BSM180D12P3C007 Karta charakterystyki MOSFET Modules Half Bridge Module SiC UMOSFET & SBD 880 W
BSM180C12P2E202 BSM180C12P2E202 Karta charakterystyki MOSFET Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02 1.36 kW
BSM180D12P2C101 BSM180D12P2C101 Karta charakterystyki MOSFET Modules Mod: 1200V 180A (no Diode) 1.36 kW
BSM450D12P4G102 BSM450D12P4G102 Karta charakterystyki MOSFET Modules 1200V, 447A, Half bridge, Full SiC-Power Module with Trench MOSFET 1.45 kW
BSM600D12P4G103 BSM600D12P4G103 Karta charakterystyki MOSFET Modules 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET 1.78 kW
BSM250D17P2E004 BSM250D17P2E004 Karta charakterystyki MOSFET Modules 1700V Vdss; 250A Id SiC Pwr Module 1.8 kW
BSM300D12P2E001 BSM300D12P2E001 Karta charakterystyki MOSFET Modules 300A SiC Power Module 1.875 kW
BSM300D12P4G101 BSM300D12P4G101 Karta charakterystyki MOSFET Modules 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET 925 W
Opublikowano: 2016-07-29 | Zaktualizowano: 2024-09-30