Powrót do: ROHM Semiconductor

ROHM Semiconductor Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

Features

  • Higher breakdown voltage (up to 10x field strength compared with silicon)
  • Higher temperature ranges
  • High-speed switching performance (over Silicon IGBTs)
  • Lower ON resistance per unit area (significantly improving power loss)

Applications

  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies
  • Electric vehicle chargers
  • Induction heating equipment
  • Motor drives
  • Trains
  • Wind power converters

Videos

Resources

Related Products

ROHM Semiconductor SCT3x 3rd Generation SiC Trench MOSFETs

Proprietary trench structure reduces ON resistance and input capacitance.

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ROHM Semiconductor TO-220ACG SiC Schottky Barrier Diodes

Reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA

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Development Tool

ROHM Semiconductor P02SCT3040KR-EVK-001 Half-Bridge Evaluation Board

For the evaluation of the SCT3040KR, a 1200V 55A N-Channel SiC Power MOSFET.

Learn Moreo ROHM Semiconductor P02SCT3040KR-EVK-001 Half-Bridge Evaluation Board View Productspowiązany z ROHM Semiconductor P02SCT3040KR-EVK-001 Half-Bridge Evaluation Board
Opublikowano: 2016-09-27 | Zaktualizowano: 2025-02-20