Qorvo QPD0007 Evaluation Board
Qorvo QPD0007 Evaluation Board is designed to evaluate the features and functionalities of single-stage unmatched QPD0007 GaN RF transistors. These RF transistors are SiC High-Electron-Mobility Transistors (HEMTs) in a DFN package that operate at DC to 5GHz frequency range. Qorvo QPD0005 RF transistors can deliver P3dB output power of 20W at +48V operation. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.
Applications
- WCDMA/LTE
- Macrocell base stations
- Microcell base stations
- Small cell
- Active antennas
- 5G massive MIMO
- General-purpose applications
Associated RF Transistor
Qorvo QPD0007 GaN RF Transistors
Single-stage unmatched transistors capable of delivering P3dB output power of 20W at +48V operation.
Related Products
Qorvo QPD0005 Evaluation Board
Designed to evaluate QPD0005 GaN single-stage, unmatched SiC RF transistors.
Opublikowano: 2020-11-24
| Zaktualizowano: 2024-08-27