Nexperia BC847xQC NPN General Purpose Transistors
Nexperia BC847xQC NPN General Purpose Transistors feature high power dissipation capability, 0.5mm low package height, and are available in the DFN1412D-3 SMD package. These transistors operate at 45V collector-emitter voltage (VCEO), 100mA collector current (IC), 200mA peak collector current (ICM), and -55°C and 150°C ambient temperature range. The BC847xQC transistors offer a smaller footprint compared to conventional leaded SMD packages and are used in applications such as general-purpose switching/amplification and space-restricted applications.
Features
- High power dissipation capability
- Suitable for Automatic Optical Inspection (AOI) of solder joint
- Smaller footprint compared to conventional leaded SMD packages
- 0.5mm low package height
- AEC-Q101 qualified
Specifications
- 45V collector-emitter voltage (VCEO)
- 100mA collector current (IC)
- 200mA peak collector current (ICM)
- 10dB noise figure
- 6V emitter-base breakdown voltage (V(BR)EBO)
- 45V collector-emitter breakdown voltage (V(BR)CEO)
- 50V collector-base breakdown voltage (V(BR)CBO)
- -55°C and 150°C ambient temperature range
Applications
- General-purpose switching and amplification
- Space restricted applications
Characteristics Curve
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Opublikowano: 2022-01-04
| Zaktualizowano: 2023-10-31