Toshiba U-MOSVIII-H Low Voltage High Efficiency MOSFETs
Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with Gen 8 trench MOS process, which helps improve power supply efficiency. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.Features
- Low drain-source on-resistance
- Low leakage current
- Enhancement mode at Vth = 2.0V to 4.0V
- Fabricated with a Gen-8 trench MOS process designed for various power supply applications
- Offers high avalanche ruggedness
- Provides significantly better trade-offs between on-resistance (RON) and input capacitance (CISS), compared to typical Gen 4 trench MOS process
- Makes it possible to reduce radiation noise, compared to predecessors
Applications
- Switching voltage regulators
- Motor drivers
- DC-DC converters
Videos
Comparison Charts
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Opublikowano: 2013-01-02
| Zaktualizowano: 2024-10-16
