Toshiba DTMOSIV Series MOSFETs
Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.
Features
- Low drain-source on-resistance
- Easy to control Gate switching
- 30% reduction in RDS(ON) compared to previous generation
- Highest efficiency switching at power supply
- Reduction in Coss
- Packages options include DPAK, IPAK, D2PAK, 8mm x 8mm DFN, I2PAK, TO-220, TO-220SIS, TO-247, TO-3P(N) and TO-3P(L)
Applications
- Switched mode power supplies (SMPS)
- Lighting
- Power factor control (PFC)
- Industrial (including UPS)
Block Diagram
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Additional Resources
Related Products
Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET
650V MOSFET featuring a low 0.092Ω drain-source on-resistance, ideal for switching power supplies.
Opublikowano: 2013-01-02
| Zaktualizowano: 2026-01-29