ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit

ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit is a compact and efficient platform designed to evaluate the BM3G005MUV 650V GaN power stage IC that integrates a high-speed gate driver and GaN HEMT in a single package. This ROHM Semiconductor evaluation board supports high-frequency switching and is optimized for testing in hard-switching topologies, such as totem-pole power factor correction (PFC) and half-bridge converters. The kit enables users to assess key performance metrics, including switching behavior, thermal characteristics, and EMI performance. With a small form factor and high power density, the BM3G005MUV-EVK-003 kit is ideal for developing next-generation AC-DC and DC-DC converters, telecom power supplies, industrial power systems, and compact adapters, where efficiency, speed, and space savings are critical.

Features

  • BM3G005MUV GaN FET, 650V, 50mΩ
  • 6.83V to 35V power supply voltage range
  • 650V drain voltage
  • 0.24mA maximum VDD quiescent current
  • 22V/ns typical turn-on slew rate
  • -40°C to +105°C operating temperature range
  • Input thresholds
    • 2.35V to 3.05V positive-going range
    • 0.87V to 1.53V negative-going range
  • Can replace traditional discrete power switches, such as a super junction MOSFET
  • 19mm x 22mm size

Applications

  • AC-DC and DC-DC converters
  • PFC circuits
  • Adapters and chargers
  • Telecom and server power supplies
  • Renewable energy systems

Required Equipment

  • DC power supply (400VDC, 100W or more)
  • DC power supply (30VDC, 10W or more)
  • Oscilloscope
  • Oscillator

Measurement Circuit

Application Circuit Diagram - ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit

Connection Diagram

Location Circuit - ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit

Schematic

Schematic - ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit
Opublikowano: 2025-05-13 | Zaktualizowano: 2025-06-01