ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit
ROHM Semiconductor BM3G005MUV-EVK-003 Evaluation Kit is a compact and efficient platform designed to evaluate the BM3G005MUV 650V GaN power stage IC that integrates a high-speed gate driver and GaN HEMT in a single package. This ROHM Semiconductor evaluation board supports high-frequency switching and is optimized for testing in hard-switching topologies, such as totem-pole power factor correction (PFC) and half-bridge converters. The kit enables users to assess key performance metrics, including switching behavior, thermal characteristics, and EMI performance. With a small form factor and high power density, the BM3G005MUV-EVK-003 kit is ideal for developing next-generation AC-DC and DC-DC converters, telecom power supplies, industrial power systems, and compact adapters, where efficiency, speed, and space savings are critical.Features
- BM3G005MUV GaN FET, 650V, 50mΩ
- 6.83V to 35V power supply voltage range
- 650V drain voltage
- 0.24mA maximum VDD quiescent current
- 22V/ns typical turn-on slew rate
- -40°C to +105°C operating temperature range
- Input thresholds
- 2.35V to 3.05V positive-going range
- 0.87V to 1.53V negative-going range
- Can replace traditional discrete power switches, such as a super junction MOSFET
- 19mm x 22mm size
Applications
- AC-DC and DC-DC converters
- PFC circuits
- Adapters and chargers
- Telecom and server power supplies
- Renewable energy systems
Required Equipment
- DC power supply (400VDC, 100W or more)
- DC power supply (30VDC, 10W or more)
- Oscilloscope
- Oscillator
Measurement Circuit
Connection Diagram
Schematic
Opublikowano: 2025-05-13
| Zaktualizowano: 2025-06-01
