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onsemi NVMJST1D3N04C Power N-Ch MOSFET

onsemi NVMJST1D3N04C Power N-Ch MOSFET is available in a TCPAK5x7 package for compact, efficient designs and high thermal performance. The NVMJST1D3N04C is AEC-Q101 qualified and PPAP capable. The onsemi NVMJST1D3N04C MOSFET is ideal for automotive applications requiring enhanced board-level reliability.

Features

  • Small footprint (5mm x 7mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • TCPAK57 5mm x 7mm top cool package
  • AEC-Q101 Qualified and PPAP capable
  • These devices are Pb-Free and are RoHS compliant

Applications

  • Power switches
    • High side driver
    • Low side driver
    • H-bridges
  • Reverse battery protection
  • Switching power supplies

Specifications

  • 40V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 386A continuous drain current
  • 1.39mohm at 10V drain-to-source on resistance

Package Style

Application Circuit Diagram - onsemi NVMJST1D3N04C Power N-Ch MOSFET

Thermal Characteristics

Performance Graph - onsemi NVMJST1D3N04C Power N-Ch MOSFET
Opublikowano: 2024-05-16 | Zaktualizowano: 2024-06-07