onsemi NJVMJD45H11G Bipolar Junction Transistor
onsemi NJVMJD45H11G Bipolar Junction Transistor (BJT) is a fast switching device with low collector-emitter saturation voltage. The electrical characteristics of NJVMJD45H11G transistor include 8A current, 80V voltage, and 20W power. This transistor is electrically similar to D44H/D45H series. onsemi NJVMJD45H11G is available in a straight lead version in plastic sleeves along with complementary pairs to simplify designs. This transistor is used for general-purpose power and switching devices. The applications include switching regulators, converters, and power amplifiers.
Features
- Lead formed for surface mount application in plastic sleeves (no suffix)
- Straight lead version in plastic sleeves ("-1" suffix)
- Epoxy meets UL94 V-0 at 0.125in
- AEC-Q101 qualified and PPAP capable
Opublikowano: 2016-09-19
| Zaktualizowano: 2022-03-11