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NXP Semiconductors MRFX1K80 Reference Circuit

NXP Semiconductors MRFX1K80H Reference Circuits allow rapid evaluation and prototyping of the NXP MRFX1K80 RF Power Transistor. The NXP MRFX1K50 RF Power LDMOS Transistor combines high RF output power, superior ruggedness, and thermal performance. The MRFX1K80 Transistor is designed to deliver 1800W at 65V CW (Continuous Wave) for applications from 1MHz to 470MHz and is capable of handling 65:1 voltage standing wave ratio (VSWR).

Features

  • For Evaluation of the NXP MRFX1K80 RF Power Transistor
  • High voltage enables high output power density, decreasing the number of components, and simplifying the design
  • Fast development time increased output power can be increased while retaining a reasonable output impedance, simplifying impedance matching
  • Pin-to-pin compatibility with NXP MRF1K50H and MRF1K50NR5 50V LDMOS transistors, making it possible for RF designers to reuse existing circuit board designs for a shorter time to market
  • High voltage lowers the current in the system, limiting the stresses on DC power supplies and reducing magnetic radiation
  • NXP 65V LDMOS technology has a breakdown voltage of 182V for improved reliability and high-efficiency architectures

Applications

  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation, and skin treatment
    • Industrial heating, welding, and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF communications
    • Weather radar

Related Products

NXP Semiconductors MRFX Series 65V LDMOS Transistors

Continuous wave RF Power transistors offering high RF output power and superior ruggedness.

Learn Moreo NXP Semiconductors MRFX Series 65V LDMOS Transistors View Productspowiązany z NXP Semiconductors MRFX Series 65V LDMOS Transistors

NXP Semiconductors MRF1K50H 1500W RF Power LDMOS Transistor

Combines high RF output power with superior ruggedness and thermal performance.

Learn Moreo NXP Semiconductors MRF1K50H 1500W RF Power LDMOS Transistor View Productspowiązany z NXP Semiconductors MRF1K50H 1500W RF Power LDMOS Transistor

NXP Semiconductors MRF1K50N 1500W RF Power Transistors

1500W RF Power Transistors combining high RF output, superior ruggedness, and thermal performance.

Learn Moreo NXP Semiconductors MRF1K50N 1500W RF Power Transistors View Productspowiązany z NXP Semiconductors MRF1K50N 1500W RF Power Transistors
View Results ( 9 ) Page
Numer części Karta charakterystyki Częstotliwość Napięcie robocze zasilania
MRFX1K80N-88MHZ MRFX1K80N-88MHZ Karta charakterystyki 87.5 MHz to 108 MHz
MRFX1K80H-88MHZ MRFX1K80H-88MHZ Karta charakterystyki 87.5 MHz to 108 MHz
MRFX1K80H-128MHZ MRFX1K80H-128MHZ Karta charakterystyki 128 MHz
MRFX1K80H-175MHZ MRFX1K80H-175MHZ Karta charakterystyki 175 MHz 60 V
MRFX1K80H-230MHZ MRFX1K80H-230MHZ Karta charakterystyki 230 MHz
MRFX1K80H-64MHZ MRFX1K80H-64MHZ Karta charakterystyki 64 MHz
MRFX1K80H-81MHZ MRFX1K80H-81MHZ Karta charakterystyki 81.36 MHz
MRFX1K80H-VHFDHY MRFX1K80H-VHFDHY Karta charakterystyki 174 MHz to 230 MHz
MRFX1K80N-230MHZ MRFX1K80N-230MHZ Karta charakterystyki 230 MHz
Opublikowano: 2018-01-15 | Zaktualizowano: 2022-10-18