MACOM CGHV38375F 400W IM GaN on SiC Transistor

MACOM CGHV38375F 400W Internally Matched GaN on SiC Transistor (IM-FET) offers 400W HPA matched to 50Ω at both input and output ports. The module operates from 2.75GHz to 3.75GHz, expanding coverage over the entire S-band radar band. MACOM CGHV38375F 400W IM GaN on SiC Transistor is a high-power amplifier supporting a >10dB of significant signal gain and 40% power-added efficiency. The CGHV38375F is ideal as a high-power building block supporting both pulsed and CW radar applications.