InterFET IFN160 N-Channel 50V Low Ciss JFETs

InterFET IFN160 N-Channel 50V Low Ciss JFETs feature low gate leakage, low cutoff voltage, and low input capacitance (Ciss). These JFETs offer high radiation tolerance, custom tests, and binning options. The IFN160 JFETs are available in SMT and bare die package options. These JFETs encompass edge case SPICE modeling (SPICE is the de facto standard for simulating circuit performance). The IFN160 JFETs are targeted for cost-sensitive low-noise designs and are ideal for audio mic and preamplifier designs. These JFETs are RoHS, REACH, and CMR compliant. Typical applications include signal mixers, high-impedance switches, headphone amplifiers, audio filters, preamplifier speaker drives, ultrasound equipment, radar and communication systems, and radiation detection.

Features

  • InterFET N107A geometry
  • 3pA typical low gate leakage @ 20V
  • 4pF typical low CISS
  • -1.0V typical low cutoff voltage
  • -80V typical BVGSS
  • High radiation tolerance
  • Custom test and binning options available
  • RoHS, REACH, and CMR compliant
  • SMT and bare die package options
  • Edge case SPICE modeling: InterFET SPICE

Applications

  • Amplifiers
  • High impedance switches
  • Signal mixers
  • Audio:
    • Tone control circuits
    • Headphone amplifiers
    • Audio filters
    • Preamplifier speaker drive
    • Microphone impedance transformation and drive
    • Phono preamplifiers
  • Military/Aero:
    • Radar and communication systems
    • Missiles and guidance systems
    • Radiation detection
  • Medical:
    • Medical imaging systems
    • Medical monitors and recordersUltrasound equipment

Dimensions

Mechanical Drawing - InterFET IFN160 N-Channel 50V Low Ciss JFETs
Opublikowano: 2024-10-23 | Zaktualizowano: 2024-10-28