Infineon Technologies OptiMOS™ 3 N-channel MOSFETs
Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power-density up to 50 percent in industrial, consumer, and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V, and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increases power density by as much as 50 percent.
Features
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
- 175°C rated
Applications
- Switch mode power supplies (SMPS)
- Motor control and drives
- Inverters
- Computing
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View Results ( 7 ) Page
| Numer części | Karta charakterystyki | Id – Ciągły prąd drenu | Rds On – rezystancja dren–źródło | Vgs – Napięcie bramka–źródło | Vgs th – Napięcie progowe bramka–źródło | Opakowanie/obudowa |
|---|---|---|---|---|---|---|
| ISC073N12LM6ATMA1 |  |
86 A | 7.3 mOhms | - 20 V, 20 V | 2.2 V | TDSON-8 |
| ISC104N12LM6ATMA1 | |
63 A | 10.4 mOhms | - 20 V, 20 V | 2.2 V | TDSON-8 |
| IPD048N06L3GATMA1 | |
90 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | DPAK-3 (TO-252-3) |
| IPD079N06L3GATMA1 | |
50 A | 7.9 mOhms | - 20 V, 20 V | 1.2 V | DPAK-3 (TO-252-3) |
| IPT030N12N3GATMA1 | |
237 A | 3 mOhms | - 20 V, 20 V | 4 V | |
| IPD220N06L3GATMA1 | |
30 A | 22 mOhms | - 20 V, 20 V | 2.2 V | DPAK-3 (TO-252-3) |
| ISC151N20NM6ATMA1 | |
74 A | 15.1 mOhms | - 20 V, 20 V | 3.7 V | TDSON-8 |
Opublikowano: 2019-03-25
| Zaktualizowano: 2022-03-11