Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET
Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET offers fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package. The MMFTP3334K FET features a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, drivers, and logic-level converters.
Features
- ESD protected gate
- High drain current
- Low on-state resistance
- Fast switching times
- Commercial-grade
- UL 94V-0 case material
- SOT-23 (TO-236) package style
- Moisture Sensitivity Level (MSL) 1
- AEC-Q101 qualified (-AQ only)
- Lead-free, RoHS and REACH compliant
Applications
- Signal processing
- Logic level converters
- Drivers
Specifications
- 30V maximum drain-source voltage
- ±20V maximum gate-source voltage
- 1000mW maximum power dissipation
- 4A maximum drain current
- 16A maximum peak drain current
- 1µA maximum drain-source leakage current
- 10µA maximum gate-source leakage current
- 0.8V to 2V gate threshold voltage range
- 71mΩ to 136mΩ maximum drain-source on-state resistance range
- 280pF typical input capacitance
- 55pF typical output capacitance
- 40pf typical reverse transfer capacitance
- 5.9nC typical total gate charge
- 0.8nC typical gate-source charge
- 1.2nC typical gate-drain charge
- 13ns typical turn-on delay/rise time
- 22ns typical turn-off delay/fall time
- 1.2V maximum forward voltage
- 125K/W typical junction-to-ambient thermal resistance
- -55°C to +150°C junction temperature range
Additional Resources
Related MOSFETs
Diotec Semiconductor Advanced Trench Technology Power MOSFETs
Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.
Opublikowano: 2023-02-22
| Zaktualizowano: 2023-02-24