MACOM CGHV27030S GaN HEMT
MACOM CGHV27030S 30W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides wide bandwidth capabilities and high efficiency with high gain. Operating from DC to 6GHz, the module offers 21dB gain, -36dBc ACLR, and 32% efficiency at 5W PAVE. The transistor is capable of operating with either a 28V or 50V rail. MACOM CGHV27030S GaN HEMT is well-suited for telecommunications applications operating at both 28V and 50V. The device is also ideal for tactical communications applications as well as L-band and S-band radar.
Features
- 30W peak output power
- 30W typical power (PSAT)
- Application - 50V telecom
- 50V operating voltage
- DC to 6GHz frequency
- Surface-mount package
- 21dB at 5W PAVE gain
- -36dBc at 5W PAVE ACLR
- 32% at 5W PAVE efficiency
- High degree of APD and DPD correction can be applied
Applications
- Land mobile radios
- Telecommunications
- 700-960MHz, 1200-1400MHz, 1800-2200MHz, 2500-2700MHz, and 3300-3700MHz
- Tactical communications from 20-2500MHz
- L-band radar
- S-band radar
Development Tools
Opublikowano: 2016-06-21
| Zaktualizowano: 2024-01-22