EPCOS / TDK Slim-Line Transient Voltage Suppressor Diodes

TDK Slim-Line Transient Voltage Suppressor (TVS) Diodes provide bidirectional electrostatic discharge (ESD) protection for one I/O line. These devices feature a low clamping voltage, low leakage current, and fast response time. The ultra-low capacitance enables excellent signal integrity for demanding high-speed interfaces, such as USB 3.1, HDMI, Displayport, and Thunderbolt. TDK Slim-Line TSV Diodes are available in general-purpose and ultra-low clamping variants with SMD packages and a wide -40°C to +125°C ambient temperature range. These TVS diodes are ideal for smartphones, true wireless earbuds, smartwatches, and many other wearable applications with tight space requirements.

Features

B74121G0050M060 (General Purpose)
- WL-CSP0201 case
- 0.6mm x 0.3mm x 0.15mm dimensions
- +5V maximum reverse working voltage (V_RWM)
- 6V to 8V breakdown voltage (V_BR)
- 2nA typical reverse leakage current (I_LEAK)
- 7.2V clamping voltage at I_TLP = 8A (V_C1)
- 8.0V clamping voltage at I_TLP = 16A (V_C2)
- 45A maximum TLP current (I_TLP)
- 15kV maximum ESD at 10 pulses (V_ESD)
- 0.10Ω dynamic resistance
- 12pF junction capacitance at 1MHz (C_J)
- 8A peak power current (I_PP)
B74121G1160M160 (General Purpose)
- WL-CSP0201 case
- 0.58mm x 0.28mm x 0.15mm dimensions
- High ESD protection to IEC 61000-4-2 up to 15kV
- 16V maximum reverse working voltage (V_RWM)
- 17.5V to 21V breakdown voltage (V_BR)
- Very low leakage current: <1nA typical reverse leakage current (I_LEAK)
- 22.8V clamping voltage at I_TLP = 8A (V_C1)
- 25.4V clamping voltage at I_TLP = 16A (V_C2)
- 0.30Ω dynamic resistance
- Low 5.5pF capacitance (typical) at 1MHz, 16V
B74111G0050M060 (General Purpose)
- WL-CSP01005 case
- 0.4mm x 0.2mm x 0.10mm dimensions
- +5V maximum reverse working voltage (V_RWM)
- 6V to 8 V breakdown voltage (V_BR)
- 2nA typical reverse leakage current (I_LEAK)
- 7.6V clamping voltage at I_TLP = 8A (V_C1)
- 8.9V clamping voltage at I_TLP = 16A (V_C2)
- 25A maximum TLP current (I_TLP)
- 15kV maximum ESD at 10 pulses (V_ESD)
- 0.17Ω dynamic resistance
- 12pF junction capacitance at 1MHz (C_J)
- 4A peak power current (I_PP)

B74111U0033M060 (Ultra-Low Clamping)
- WL-CSP01005 case
- 0.4mm x 0.2mm x 0.10mm dimensions
- +3.3V maximum reverse working voltage (V_RWM)
- 6.3V typical breakdown voltage (V_BR)
- 1nA typical reverse leakage current (I_LEAK)
- 3.8V clamping voltage at I_TLP = 8A (V_C1)
- 5.0V clamping voltage at I_TLP = 16A (V_C2)
- 15kV maximum ESD at 10 pulses (V_ESD)
- 0.15Ω dynamic resistance
- 0.48pF junction capacitance at 1MHz (C_J)
- 7A peak power current (I_PP)
B74121U0033M060 (Ultra-Low Clamping)
- WL-CSP0201 case
- 0.6mm x 0.3mm x 0.15mm dimensions
- +3.3V maximum reverse working voltage (V_RWM)
- 6.3V typical breakdown voltage (V_BR)
- 1nA typical reverse leakage current (I_LEAK)
- 3.8V clamping voltage at I_TLP = 8A (V_C1)
- 5.2V clamping voltage at I_TLP = 16A (V_C2)
- 15kV maximum ESD at 10 pulses (V_ESD)
- 0.10Ω dynamic resistance
- 0.65pF junction capacitance at 1MHz (CJ)
- 7A peak power current (I_PP)
B74121G0160M060 (General Purpose)
- Up to 16V working voltage
- ESD protection to IEC 61000-4-2, VESD,max=10kV
- V_{clamp, typical} = 24V at ITLP = 8A low clamping voltage
- I_{leak, typical} = 1nA at 16V very low leakage current
- C_typical = 5pF at 1MHz low capacitance
B74121U0055M060/B74111U0055M060
- Up to 5.5V maximum DC voltage
- USB 2.0 data bus of USB-C™ (D+/D-)
- 3.8V and 4V with an ITLP of 8A low clamping voltages
- ESD discharge voltage of up to 15kV
- 0.48pF maximum capacitance value
- WLCSP 01005 and WLCSP 0201 compact packages
- 100µm or 150µm extremely flat heights