CGHV60040D & CGHV60075D5 6GHz GaN HEMTs

MACOM CGHV60040D and CGHV60075D5 6GHz Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. These GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Both series also offer greater power density and wider bandwidths and are ideal for a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers. These 6GHz GaN HEMTs are offered as bare die with an overall size of 820μm x 1800μm x 100μm for CGHV60040D and 3000μm x 820μm x 100μm for CGHV60075D5.