Vishay Semiconductors TrenchFET® Gen III Power MOSFETs
Vishay Semiconductor TrenchFET® Gen III Power MOSFETs offer low on-resistance and on-resistance times gate charge in PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The lower on-resistance and gate charge of TrenchFET Gen III Power MOSFETs translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology. Vishay Semiconductor TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Features
- Charge-balanced TrenchFET Gen III utilizing TurboFET drain structure technology provides record-breaking gate charge while maintaining excellent on-resistance performance
- On-resistance times gate-drain charge FOM down to 23.2mΩ-nC at VGS = 4.5V
- Low switching losses enable high efficiency and low power consumption
- Lower gate charge enables higher frequency operation, allowing the use of smaller passive components in DC-to-DC converters
- Available in thermally advanced PowerPAK 1212-8 and PowerPAK SO-8 packages
Applications
- High-side MOSFET in synchronous buck
- Notebook computers
- Servers
- Systems using point-of-load (PoL)
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