Powrót do: Vishay

Vishay DFN3820A Trench MOS Barrier Schottky Rectifiers

Vishay DFN3820A Trench MOS Barrier Schottky (TMBS®) Rectifiers are high-current density and high-efficiency capability rectifiers. These rectifiers are available in the low-profile DFN3820A package with a typical height of 0.88mm. The TMBS rectifiers in DFN3820A packages are compatible with SMP (DO-220AA) package case outline as well. These rectifiers feature extremely low forward voltage and 2A, 3A, 5A, or 7A forward currents. The DFN3820A packaged MOS barrier Schottky rectifiers exhibit operating junction temperatures up to 175°C. Typical applications include high-frequency inverters, freewheeling, DC/DC converters, and polarity protection in industrial, consumer, and connectivity sectors.

Features

  • Low profile - the typical height of 0.88mm
  • High current density and high-efficiency capability
  • Extremely low forward voltage
  • 2A, 3A, 5A, or 7A forward currents
  • Compatible with SMP (DO-220AA) package case outline
  • Operating junction temperature up to 175°C

Applications

  • Low voltage
  • High-frequency inverters
  • Freewheeling
  • DC/DC converters
  • Polarity protection 
  • Computers
  • Energy sector
  • Consumer
  • Connectivity
  • Industrial
Infographic - Vishay DFN3820A Trench MOS Barrier Schottky Rectifiers

Dimensions

Mechanical Drawing - Vishay DFN3820A Trench MOS Barrier Schottky Rectifiers

Related Products

Vishay Semiconductors Prostowniki z certyfikatem AEC-Q101 w obudowie DFN

Dostępne w obudowie DFN3820A o typowej wysokości 0,88 mm i niskim spadku napięcia przewodzenia.

Learn Moreo Vishay Semiconductors Prostowniki z certyfikatem AEC-Q101 w obudowie DFN View Productspowiązany z Vishay Semiconductors Prostowniki z certyfikatem AEC-Q101 w obudowie DFN

Vishay General Semiconductor TMBS® Trench MOS Barrier Schottky Rectifiers

Current ratings from 3A to 60A in a very low-profile surface-mount package with a height of 0.95mm.

Learn Moreo Vishay General Semiconductor TMBS® Trench MOS Barrier Schottky Rectifiers View Productspowiązany z Vishay General Semiconductor TMBS® Trench MOS Barrier Schottky Rectifiers

Vishay Semiconductors Signal DFN Package

Includes ESD protection, Zener, Schottky, and switching diodes housed in a ultra-small DFN package.

Learn Moreo Vishay Semiconductors Signal DFN Package View Productspowiązany z Vishay Semiconductors Signal DFN Package

Vishay High-Current Density TMBS eSMP Rectifiers

Ideal for automated placement, Trench MOS Schottky technology (TMBS), low profile of 1.3mm typical.

Learn Moreo Vishay High-Current Density TMBS eSMP Rectifiers View Productspowiązany z Vishay High-Current Density TMBS eSMP Rectifiers
View Results ( 41 ) Page
Numer części Karta charakterystyki Opakowanie/obudowa If – prąd przewodzenia diody Vrrm – powtarzajace się napięcie wsteczne Vf – Napięcie przewodzenia Ifsm – prąd udarowy przewodzenia Ir – Prąd wsteczny Produkt
V7NM153HM3/H V7NM153HM3/H Karta charakterystyki DFN-3820A-2 7 A 150 V 900 mV 120 A 1 uA Schottky Rectifiers
V5NM153HM3/H V5NM153HM3/H Karta charakterystyki DFN-3 5 A 150 V 890 mV 100 A 500 nA Schottky Rectifiers
V2N103-M3/I V2N103-M3/I Karta charakterystyki DFN-3820A-2 2 A 100 V 610 mV 50 A 2 uA Schottky Rectifiers
V2N103HM3/I V2N103HM3/I Karta charakterystyki DFN-3820A-2 2 A 100 V 610 mV 50 A 2 uA Schottky Rectifiers
V2NL63-M3/I V2NL63-M3/I Karta charakterystyki DFN-3820A-2 2 A 60 V 510 mV 50 A 50 uA Schottky Rectifiers
V2NL63HM3/I V2NL63HM3/I Karta charakterystyki DFN-3820A-2 2 A 60 V 510 mV 50 A 50 uA Schottky Rectifiers
V2NM103-M3/I V2NM103-M3/I Karta charakterystyki DFN-3820A-2 2 A 100 V 660 mV 50 A 300 nA Schottky Rectifiers
V2NM103HM3/I V2NM103HM3/I Karta charakterystyki DFN-3820A-2 2 A 100 V 660 mV 50 A 300 nA Schottky Rectifiers
V2NM63-M3/I V2NM63-M3/I Karta charakterystyki DFN-3820A-2 2 A 60 V 580 mV 50 A 10 uA Schottky Rectifiers
V2NM63HM3/I V2NM63HM3/I Karta charakterystyki DFN-3820A-2 2 A 60 V 580 mV 50 A 10 uA Schottky Rectifiers
Opublikowano: 2023-07-11 | Zaktualizowano: 2023-07-31