ROHM Semiconductor QS6Kx Nch+Nch Automotive MOSFETs
ROHM Semiconductor QS6Kx Nch+Nch Automotive MOSFETs are low on-resistance MOSFETs that come with a built-in G-S protection diode. These MOSFETs are AEC-Q101 qualified and feature ±1A continuous drain current (ID). The QS6Kx MOSFETs are available in a small surface-mount package (TSMT6). ROHM Semiconductor QS6Kx MOSFETs are suitable for power-switching applications.
Features
- Low on-resistance
- Built-in G-S diode
- AEC-Q101 qualified
- Small surface mount package (TSMT6)
Specifications
- QS6K1FRA
- 30V drain-to-source voltage (VDSS)
- QS6K21FRA
- 45V drain-to-source voltage (VDSS)
- Common
- ±1A continuous drain current (ID)
- 1.25W power dissipation (PD)
- -55°C to +150°C operating temperature range
QS6K1FRA Equivalent Circuit
QS6K21FRA Inner Circuit
Associated Products
ROHM Semiconductor AEC-Q101 Automotive MOSFETs
Provide automotive support, wide drive type, and support from a small signal to high power.
ROHM Semiconductor Urządzenia motoryzacyjne
Wraz z rozwojem technologii zapewniają zoptymalizowane rozwiązanie dla przemysłu motoryzacyjnego.
View Results ( 2 ) Page
| Numer części | Karta charakterystyki | Opis | Vds – Napięcie przebicia dren–źródło | Rds On – rezystancja dren–źródło |
|---|---|---|---|---|
| QS6K1FRATR |  |
MOSFETs 0.26Rds(on) 1.7Qg | 30 V | 238 mOhms |
| QS6K21FRATR | |
MOSFETs 0.415Rds(on) 1.5Qg | 45 V | 420 mOhms |
Opublikowano: 2020-11-18
| Zaktualizowano: 2024-10-29