ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs
ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. These ROHM devices combine high-speed switching with an internal diode and high reverse recovery time (trr) characteristics for optimized efficiency and lower loss while contributing to smaller designs.
Features
- N-channel transistor type
- 30V gate-source voltage
- 5V gate-source threshold
- 1.43Ω to 936mΩ drain-source resistance
- 600V to 650V drain-source breakdown
- 53W to 495W power dissipation
- -55°C to +150°C operating temperature range
Applications
- Integrated power supply inverters, lighting devices, and motors
- Solar batteries and power conditioners
- High-frequency bridge circuits
- Circuits susceptible to current rate-of-change (di/dt) damage
- Transformer-equipped sets
Associated MOSFETs
ROHM Semiconductor Silicon Power MOSFETs
Deliver ultra-fast switching speeds and low on-resistance in a broad range of package types.
ROHM Semiconductor Super Junction-MOS EN & KN MOSFETs
Super Junction-MOS KN and EN MOSFETs.
Opublikowano: 2019-04-11
| Zaktualizowano: 2024-01-23