Najnowsze Tranzystory – Mouser Polska

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Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package

09.29.2025

- Uses Trench 9 technology, meets AEC-Q101 requirements.

Nexperia BUK9Q N-Channel Trench MOSFET

09.09.2025

- Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.

Nexperia BUK6Q8R2-30PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q66-60PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia MJPEx Bipolar Junction Transistors (BJTs)

08.26.2025

- CFP15B package offers a compact & cost-efficient alternative to the MJD series in the DPAK package.

Nexperia BUK6Q21-30PJ MOSFET

08.19.2025

- 30V, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q26-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q12-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

07.03.2025

- Normally off e-mode devices that deliver superior performance and very low on-state resistance.

Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

07.03.2025

- 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

Nexperia PXNx N-Channel Logic Level Trench MOSFETs

04.14.2025

- 60V and 100V MOSFETS designed for high-efficiency power management in various applications.

Nexperia GANB8R0-040CBA Bi-Directional GaN FET

04.14.2025

- 40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.

Nexperia NX5020x N-Channel Enhancement Mode FETs

04.01.2025

- Devices have a very low threshold voltage and very fast switching using Trench MOSFET technology.

Nexperia Tranzystory mocy MOSFET dostosowane do konkretnych zastosowań

01.21.2025

- Combines proven MOSFET expertise with broad application understanding to create an expanding range.

Nexperia Tranzystory ASFET CCPAK do wymiany podczas pracy i miękkiego startu

01.08.2025

- Offers a reliable linear mode, enhanced SOA, and low RDS(on) in a single device.

Nexperia BC5xPAS-Q 1A Medium Power PNP Transistors

12.30.2024

- AEC-Q101 qualified PNP transistors in an ultra-thin DFN2020D-3 (SOT1061D) SMD plastic package.

Nexperia BC869-Q Power Transistors

12.11.2024

- PNP medium power transistors in a SOT89 (SC-62) medium power and flat lead plastic package.

Nexperia Dwukierunkowy tranzystor FET GaN GANB4R8-040CBA

10.01.2024

- Dwukierunkowy tranzystor polowy GaN o wysokiej mobilności elektronów (HEMT) 40 V, 4,8 mΩ w obudowie WLCSP.

Nexperia Tranzystor MOSFET BUK7J2R4-80M z kanałem typu N

08.30.2024

- Zbudowany w oparciu o technologię dzielonej bramki Trench 14 i umieszczony w obudowie LFPAK56E.

Nexperia Tranzystory PBSSxx50PAS/PBSSxx50PAS-Q

07.04.2024

- Provides low collector-emitter saturation voltage and high collector current capability.

Nexperia Tranzystor FET z azotku galu (GaN) GANE3R9-150QBA

07.02.2024

- Tranzystor FET z azotki galu (GaN) o napięciu 150 V i rezystancji 3,9 mΩ w obudowie VQFN, przeznaczony do ogólnego zastosowania.

Nexperia N-kanałowe tranzystory MOSFET SIC NSF0x0120

07.01.2024

- Available in a 7-pin TO-263 or 22-pin QDPAK plastic package for surface-mounting PCB technology.

Nexperia Tranzystory MOSFET PSMNxRx-80YSF NextPower z kanałem typu N

06.24.2024

- Tranzystory MOSFET ze standardowym sterowaniem bramką z niskim współczynnikiem Qrr zapewniającym wyższą wydajność i mniejsze skoki napięcia.

Nexperia NSF0x120L4A0 N-Channel MOSFETs

04.23.2024

- Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages.

Nexperia Tranzystor ASFET PSMN047-100NSE z kanałem typu N

04.04.2024

- The 100V, 53mΩ ASFET combines enhanced SOA in a compact 2mm x 2mm footprint,

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ROHM Semiconductor RS4P063BPHZG Wide-SOA N-Channel Power MOSFET

10.23.2026

- Features an expanded Safe Operating Area that helps suppress secondary breakdown.

ROHM Semiconductor RGA50TxX2EHR Automotive Field Stop Trench IGBTs

10.22.2026

- These devices feature low switching and conduction losses.

ROHM Semiconductor RGA50TxX2HR Automotive Field Stop Trench IGBTs

10.22.2026

- These devices feature low switching and conduction losses.

Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor

10.19.2026

- Features low on-resistance, a very low gate threshold voltage, and fast switching performance.

Qorvo QPD1000A GaN Input Matched Transistor

10.14.2026

- 50Ω input-matched discrete GaN-on-SiC HEMT that operates from 30MHz-1215MHz on a 28V supply rail.

Qorvo QPD1426/QPD1426L GaN RF Power Transistors

10.06.2026

- 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz.

Qorvo QPD2562L GaN RF Power Transistor

10.06.2026

- A 200W to 300W discrete GaN-on-SiC HEMT that operates from 2.5GHz to 2.9GHz and 2.9GHz to 3.3GHz.

Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

10.02.2026

- 1400V CoolSiC MOSFET module for electric commercial-vehicle traction inverters.

onsemi NVMTS1D1N08X N‐Channel Power MOSFETs

09.17.2026

- 80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Vishay SQD50P04-09L 40V Automotive P-Channel Power MOSFET

09.16.2026

- The device is ideal for automotive, power distribution, and industrial power control applications.

Texas Instruments JFE2325 Dual Low-Power N-Channel JFET

09.09.2026

- Intended for use with very high-impedance sensors such as electret condenser microphones (ECMs).

IXYS MOSFET SiC IXSH65N120L3KHV

09.02.2026

- 1200V, 35mΩ, and 67A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH150N120L3KHV

09.02.2026

- 1200V, 13.5mΩ, and 147A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH100N120L3KHV

09.02.2026

- 1200V, 21mΩ, and 102A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH50N120L3KHV

09.02.2026

- 1200V, 55mΩ, and 48.3A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH110N120L3KHV

09.02.2026

- 1200V, 18mΩ, and 112A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

Microchip Technology HV-D3 mSiC® Power Modules

09.01.2026

- Simplifies and accelerates adoption of SSTs in data centers & other high-voltage power applications.

onsemi NXH011F120M3F2 SiC MOSFETs

08.25.2026

- Full-bridge EliteSiC MOSFET modules with 11mΩ on-resistance and 1200V rating.

onsemi 80V Single N-Channel Power MOSFETs

08.25.2026

- Offer low RDS(on) to minimize conduction losses & low QG and capacitance to minimize driver losses.

STMicroelectronics STGI15C60S 3-Phase Inverter & IGBT SLLIMM

08.19.2026

- This device is ideal for motor drives operating up to 20kHz in hard-switching circuitry.

iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET

08.12.2026

- Automotive 200V N-channel MOSFET with SuperQ technology and TO-220 packaging.

STMicroelectronics SGT1D5R10MEA PowerGaN Transistor

08.11.2026

- Offers extremely low conduction losses, high current capability, and ultra-fast switching operation.

STMicroelectronics SGT3D5R10MEB PowerGaN Transistor

08.10.2026

- Designed for high-efficiency and high-power switching applications.

STMicroelectronics STH4N150-2AG N-Channel Power MOSFET

08.10.2026

- Designed to ensure a high level of voltage and robustness for the automotive applications.

onsemi EMD4DXV6 Digital Transistors ( BRTs)

07.30.2026

- Designed to replace a single device and its external resistor bias network.

Przeglądanie: 1 - 25 z 561

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