Najnowsze Elementy dyskretne półprzewodnikowe

.hide-partial { max-height: none; } .show-more { display: none; }

.catnav-wrapper { height: auto; overflow: visible; } .catalog-nav-tabs ul { white-space: normal; }

Rodzaje elementów dyskretnych półprzewodnikowych

Lista Ilustracje

Zastosowane filtry:

Producent = IXYS Wróć do zakładki Produkty, aby zmodyfikować bieżące filtry.

IXYS Moduły diod przełączających IXBOD2

09.22.2026

- Provides fast and reliable overvoltage protection in demanding power electronics applications.

IXYS MOSFET SiC IXSH50N120L3KHV

09.02.2026

- 1200V, 55mΩ, and 48.3A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH150N120L3KHV

09.02.2026

- 1200V, 13.5mΩ, and 147A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH110N120L3KHV

09.02.2026

- 1200V, 18mΩ, and 112A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH100N120L3KHV

09.02.2026

- 1200V, 21mΩ, and 102A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS MOSFET SiC IXSH65N120L3KHV

09.02.2026

- 1200V, 35mΩ, and 67A SiC MOSFET, recommended for use in industrial switch-mode power supplies.

IXYS Podzespoły SCR SK002xSx o wysokiej czułości

08.27.2026

- Sensitive SCRs with microprocessor drive support and high noise immunity.

IXYS Prostownik DK010S3ARP 1000 V 10 A

07.20.2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

IXYS Dioda prostownicza ogólnego zastosowania DK610S3RP 1600 V

07.20.2026

- Space-saving, ideal for automated assembly, and well-suited for DC phase-control applications.

IXYS Tranzystory mocy MOSFET X4-Class

02.02.2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

IXYS Diody wysokonapięciowe DP o szybkim odzyskiwaniu

01.20.2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

IXYS Tranzystor mocy MOSFET MMIX1T500N20X4 X4-Class 200 V

10.08.2025

- Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

09.19.2025

- These devices have a high blocking voltage with low on-state resistance [RDS(ON)].

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

08.27.2025

- Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).

IXYS Prostowniki krzemowe serii Dx do zastosowań motoryzacyjnych

04.14.2025

- Features glass-passivated junctions, ensuring stable operation and high reliability.

IXYS Diody Schottky'ego DCK SiC

04.03.2025

- Features high-frequency operation and high surge current capability.

IXYS Moduł diody tyrystorowej MCMA140PD1800TB

03.25.2025

- 140A diode module, integrated with a planar passivated chip and offers long-term stability.

IXYS Tranzystor mocy MOSFET IXFP34N65X2W

03.17.2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS IXSA80N120L2-7 MOSFET SiC

03.06.2025

- Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.

IXYS Tranzystor MOSFET SiC IXSA40N120L2-7

03.06.2025

- Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.

IXYS Tranzystor mocy MOSFET IXFH46N65X2W

02.27.2025

- 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS Tranzystor mocy MOSFET IXFH34N65X2W

02.27.2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS MOSFET SiC IXSH40N120L2KHV

02.18.2025

- 1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS MOSFET SiC IXSH80N120L2KHV

02.18.2025

- 1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS IXTNx00N20X4 miniBLOC MOSFETs

11.28.2024

- Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.

Przeglądanie: 1 - 25 z 28

Filtruj wg:

ROHM Semiconductor ESDxxVFM Transient Voltage Suppressors

10.23.2026

- These are high-reliability, small-mold devices with a silicon epitaxial planar structure.

ROHM Semiconductor RS4P063BPHZG Wide-SOA N-Channel Power MOSFET

10.23.2026

- Features an expanded Safe Operating Area that helps suppress secondary breakdown.

ROHM Semiconductor RGA50TxX2EHR Automotive Field Stop Trench IGBTs

10.22.2026

- These devices feature low switching and conduction losses.

ROHM Semiconductor RGA50TxX2HR Automotive Field Stop Trench IGBTs

10.22.2026

- These devices feature low switching and conduction losses.

Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor

10.19.2026

- Features low on-resistance, a very low gate threshold voltage, and fast switching performance.

Qorvo QPD1000A GaN Input Matched Transistor

10.14.2026

- 50Ω input-matched discrete GaN-on-SiC HEMT that operates from 30MHz-1215MHz on a 28V supply rail.

Qorvo QPD2562L GaN RF Power Transistor

10.06.2026

- A 200W to 300W discrete GaN-on-SiC HEMT that operates from 2.5GHz to 2.9GHz and 2.9GHz to 3.3GHz.

Qorvo QPD1426/QPD1426L GaN RF Power Transistors

10.06.2026

- 220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz.

Littelfuse Diody TVS z wyprowadzeniami osiowymi AK8-FB

10.05.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Dioda TVS LTKAK1.5-L

10.05.2026

- Offers a clamping voltage lower than alternative technologies such as MOVs and GDTs.

Littelfuse Diody TVS AK6-FB z wyprowadzeniami osiowymi

10.05.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET Module

10.02.2026

- 1400V CoolSiC MOSFET module for electric commercial-vehicle traction inverters.

Littelfuse Matryca diod TVS SP4315-01WTG

10.01.2026

- Ultra-low capacitance, bidirectional design, and protects electronic equipment from destructive ESD.

IXYS Moduły diod przełączających IXBOD2

09.22.2026

- Provides fast and reliable overvoltage protection in demanding power electronics applications.

Littelfuse Diody krzemowe DSxARP z barierą Schottky'ego do zastosowań motoryzacyjnych

09.22.2026

- Provides low forward voltage drop and stable electrical performance.

onsemi NVMTS1D1N08X N‐Channel Power MOSFETs

09.17.2026

- 80V automotive MOSFETs with low on-resistance and soft-recovery body diode.

Vishay SQD50P04-09L 40V Automotive P-Channel Power MOSFET

09.16.2026

- The device is ideal for automotive, power distribution, and industrial power control applications.

STMicroelectronics TVS221SC-1T2 Unidirectional Single Line TVS

09.15.2026

- Designed to protect the power line or other low-speed I/O against ESD and small surge transients.

MACOM MLP7102-0503 PIN Diode

09.14.2026

- Designed for use in passive or active limiters from 100MHz to beyond 20GHz frequency range.

onsemi ESDM1021 ESD Protection Diode

09.14.2026

- Compact 2V bidirectional ESD diode for GPIO and low-voltage power-line protection.

Littelfuse Diody TVS AK10-FB z wyprowadzeniami osiowymi

09.10.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diody TVS AK1-A z wyprowadzeniami osiowymi

09.10.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Samochodowa dioda TVS TP7.0SMD-XC

09.10.2026

- Protects sensitive electronic equipment from voltage transients induced by lightning.

Littelfuse Diody TVS AK3-FB z wyprowadzeniami osiowymi

09.10.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Littelfuse Diody TVS AK3-A z wyprowadzeniami osiowymi

09.10.2026

- Designed to meet the severe surge-test environment for both AC and DC line-protection applications.

Przeglądanie: 1 - 25 z 1046

Rodzaje elementów dyskretnych półprzewodnikowych

Zastosowane filtry:

Filtruj wg:

Biuro Obsługi Klienta

Firma

Zasoby

Wsparcie