SiC MOSFETs – Mouser Poland

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650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

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Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (PLN) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package/Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package SCT027H65G3AG STMicroelectronics 1: 51,48 zł 514In Stock 1 000Expected 3/9/2027	Mfr. Part No. SCT027H65G3AG Mouser Part No 511-SCT027H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	514In Stock 1 000Expected 3/9/2027	Cut Tape 51,48 zł 29,30 zł 29,22 zł Reel 27,63 zł	Min.: 1 Mult.: 1 : 1 000	SMD/SMT	H2PAK-7	1 Channel	650 V	60 A	39.3 mOhms	- 10 V, + 22 V	3 V	48.6 nC	- 55 C	+ 175 C	300 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package SCT040W65G3-4 STMicroelectronics 1: 44,00 zł 457In Stock	Mfr. Part No. SCT040W65G3-4 Mouser Part No 511-SCT040W65G3-4	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	457In Stock	44,00 zł 24,11 zł 22,48 zł	Min.: 1 Mult.: 1	Through Hole	HiP247-4	1 Channel	650 V	30 A	63 mOhms	- 10 V, + 22 V	3 V	37.5 nC	- 55 C	+ 200 C	240 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package SCT040W65G3-4AG STMicroelectronics 1: 50,78 zł 429In Stock	Mfr. Part No. SCT040W65G3-4AG Mouser Part No 511-SCT040W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	429In Stock	50,78 zł 33,92 zł 31,50 zł 27,15 zł	Min.: 1 Mult.: 1	Through Hole	HiP247-4	1 Channel	650 V	30 A	63 mOhms	- 10 V, + 22 V	3 V	37.5 nC	- 55 C	+ 200 C	240 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package SCT055TO65G3 STMicroelectronics 1: 34,63 zł 1 404In Stock	Mfr. Part No. SCT055TO65G3 Mouser Part No 511-SCT055TO65G3	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	1 404In Stock	Cut Tape 34,63 zł 18,96 zł 17,73 zł 16,41 zł Reel 16,41 zł	Min.: 1 Mult.: 1 : 1 800	SMD/SMT	TOLL-8	1 Channel	650 V	30 A	72 mOhms	- 10 V, + 22 V	3 V	31 nC	- 55 C	+ 175 C	234 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A SCT040H65G3AG STMicroelectronics 1: 47,87 zł 576In Stock	Mfr. Part No. SCT040H65G3AG Mouser Part No 511-SCT040H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	576In Stock	Cut Tape 47,87 zł 27,94 zł 27,59 zł 26,18 zł Reel 23,72 zł MouseReel Available	Min.: 1 Mult.: 1 : 1 000	SMD/SMT		1 Channel	650 V	30 A	40 mOhms	- 10 V, + 22 V	4.2 V	39.5 nC	- 55 C	+ 175 C	221 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package SCT018H65G3AG STMicroelectronics 1: 62,70 zł 1In Stock 1 000Expected 2/5/2027	Mfr. Part No. SCT018H65G3AG Mouser Part No 511-SCT018H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	1In Stock 1 000Expected 2/5/2027	Cut Tape 62,70 zł 37,71 zł Reel 35,64 zł MouseReel Available	Min.: 1 Mult.: 1 : 1 000	SMD/SMT	H2PAK-7	1 Channel	650 V	55 A	27 mOhms	- 18 V, + 18 V	4.2 V	79.4 nC	- 55 C	+ 175 C	385 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package SCT040TO65G3 STMicroelectronics 1: 38,98 zł 8In Stock 1 800Expected 2/19/2027	Mfr. Part No. SCT040TO65G3 Mouser Part No 511-SCT040TO65G3	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	8In Stock 1 800Expected 2/19/2027	Cut Tape 38,98 zł 24,46 zł 22,31 zł 19,18 zł Reel 19,18 zł	Min.: 1 Mult.: 1 : 1 800	SMD/SMT	TOLL-8	1 Channel	650 V	35 A	63 mOhms	- 10 V, + 22 V	3 V	42.5 nC	- 55 C	+ 175 C	288 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package SCT018W65G3-4AG STMicroelectronics 1: 65,65 zł 600Expected 7/16/2027	Mfr. Part No. SCT018W65G3-4AG Mouser Part No 511-SCT018W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package	Datasheet	600Expected 7/16/2027	65,65 zł 38,24 zł 37,36 zł	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	650 V	55 A	27 mOhms	- 18 V, + 18 V	4.2 V	77 nC	- 55 C	+ 200 C	398 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A SCT055W65G3-4AG STMicroelectronics 1: 51,74 zł 600Expected 4/16/2027	Mfr. Part No. SCT055W65G3-4AG Mouser Part No 511-SCT055W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A Learn More about STMicroelectronics stm silicon carbide mosfets	Datasheet	600Expected 4/16/2027	51,74 zł 36,17 zł 32,25 zł 27,59 zł	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	650 V	30 A	72 mOhms	- 18 V, + 18 V	4.2 V	32 nC	- 55 C	+ 200 C	210 W	Enhancement	AEC-Q100
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package SCT018H65G3-7 STMicroelectronics 1 000: 33,44 zł Non-Stocked Lead-Time 25 Weeks New Product	Mfr. Part No. SCT018H65G3-7 Mouser Part No 511-SCT018H65G3-7 New Product	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	Non-Stocked Lead-Time 25 Weeks	Reel 33,44 zł	Min.: 1 000 Mult.: 1 000 : 1 000	SMD/SMT	H2PAK-7	1 Channel	650 V	55 A	27 mOhms	- 10 V, 22 V	4.2 V	79.4 nC	- 55 C	+ 175 C	385 W	Enhancement

650V 3rd Gen SiC MOSFETs

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