onsemi NCP81075 Dual MOSFET Gate Driver

onsemi NCP81075 Dual MOSFET Gate Driver is designed to drive the gates of both High Side and Low Side power MOSFETs in a synchronous buck converter. The NCP81075 integrates a driver IC and an on-chip bootstrap diode, eliminating the need for an external discrete diode. A high floating top driver design accommodates HB voltage as high as 180V. The Low Side and High Side are independently controlled and match to 4ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high-side and low-side driver, forcing the output low when the drive voltage is below a specific threshold. The NCP81075 is offered in SOIC-8, DFN8, and WDFN10 packages for design flexibility and is Pb−Free, Halogen-Free/BFR-Free, and RoHS-Compliant.

Features

  • Drives two N-Channel MOSFETs in High Side and Low Side
  • Integrated Bootstrap Diode for High Side Gate Drive
  • Bootstrap supply voltage range up to 180V
  • 4A source, 4A sink output current capability
  • Drives 1nF load with typical rise/fall times of 8ns/7ns
  • Wide 8.5V to 20V supply voltage range
  • Fast 20ns propagation delay times (Typical)
  • 2ns delay matching (Typical)
  • 8ns rise / 7ns fall times with 1000pF load
  • Switching frequency up to 1MHz
  • Under-Voltage Lockout (UVLO) protection for drive voltage
  • Operating junction temperature range of -40°C to 140°C
  • Package options: SOIC-8, DFN8, WDFN10
  • Pb−Free
  • Halogen Free/BFR Free
  • RoHS Compliant

Applications

  • Buck converters
  • Telecom and datacom
  • Isolated power supplies
  • Class D audio amplifier
  • Two switch and Active Clamp Forward Converters
  • Solar optimizer

Application Diagram

onsemi NCP81075 Dual MOSFET Gate Driver
Opublikowano: 2018-01-25 | Zaktualizowano: 2024-05-10