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Winbond W97BH2MB 2GB High-Speed SDRAM

Winbond W97BH2MB High-Speed SDRAM is internally configured as an 8-Bank memory. The Winbond W97BH2MB devices use a double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. The 10-bit CA bus contains a command, address, and Bank/Row Buffer information. Each command uses one clock cycle, during which command information is transferred on both the positive and negative edges of the clock.

Features

  • VDD1 = 1.7~1.95V
  • VDD2/VDDQ = 1.14V~1.30V
  • x16 / x32 data width
  • Up to 533MHz clock rate
  • Up to 1066Mbps data rate
  • Four-bit prefetch DDR architecture
  • Eight internal banks for concurrent operation
  • Programmable READ and WRITE latencies (RL/WL)
  • 4, 8, or 16 programmable burst lengths
  • Per bank refresh
  • Partial Array Self-Refresh(PASR)
  • Deep Power Down Mode (DPD Mode)
  • Programmable output buffer driver strength
  • Data mask (DM) for writing data
  • Clock Stop capability during idle periods
  • Double data rate for data output
  • Differential clock inputs
  • Bidirectional differential data strobe
  • Support boundary scan for connectivity test
  • HSUL_12 interface
  • JEDEC LPDDR2-S4B compliance
  • Support package
    • VFBGA134 (10mm x11.5mm) single channel
  • Operating temperature range
    • -25°C ≤ TCASE ≤ 85°C
    • -40°C ≤ TCASE ≤ 85°C

Block Diagram

Block Diagram - Winbond W97BH2MB 2GB High-Speed SDRAM
Opublikowano: 2022-07-07 | Zaktualizowano: 2023-01-12