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Vishay / Siliconix SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET

Vishay Siliconix SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165Ohms and 60A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, the Vishay Siliconix SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.

Features

  • TrenchFET® Power MOSFET
  • 100% Rg and UIS Tested
  • Halogen-free According to IEC 61249-2-21 Definition
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • Motor Control
  • Industrial
  • Load Switch
  • ORing

Associated Products

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moreo Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productspowiązany z Vishay / Siliconix TrenchFET® Gen IV MOSFETs
Opublikowano: 2012-05-24 | Zaktualizowano: 2021-03-15