Vishay / Siliconix SiHH080N60E E Series Power MOSFETs
Vishay / Siliconix SiHH080N60E E Series Power MOSFETs provide 4th generation E series technology in a PowerPAK® 8 x 8 package. The SiHH080N60E MOSFETs utilize a low figure-of-merit (FOM) Ron x Qg and low effective capacitance (Co(er)). The Vishay / Siliconix SiHH080N60E E Series Power MOSFETs' reduced switching and conduction losses are optimized with a 650V drain-source voltage 63nC total gate charge.
The SiHH080N60E E Series Power MOSFETs are suitable for server, telecom power, switch mode (SMPS), and power factor correction (PFC) power supplies.
Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
Associated Products
Vishay Semiconductors 4th Gen E Series MOSFETs
Feature low FOM, low effective capacitance, and reduced switching as well as conduction losses.
Vishay / Siliconix E Series High Voltage MOSFETs
Offers a 30% reduction in specific On-resistance versus the Vishay S Series Power MOSFETs.
Circuit Diagram
Opublikowano: 2021-03-10
| Zaktualizowano: 2022-03-11