Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV)
Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.
Features
- 0.16Ω to 0.196Ω RDS(ON) low drain-source on-resistance
- Easy to control gate switching
- 2.7V to 4.5V Vth enhancement mode
View Results ( 11 ) Page
| Numer części | Karta charakterystyki | Rds On – rezystancja dren–źródło | Vgs – Napięcie bramka–źródło | Vgs th – Napięcie progowe bramka–źródło | Qg – ładunek bramki |
|---|---|---|---|---|---|
| TK16G60W5,RVQ |  |
230 mOhms | - 30 V, 30 V | 3 V | 43 nC |
| TK16V60W5,LVQ | |
245 mOhms | - 30 V, 30 V | 3 V | 43 nC |
| TK16A60W5,S4VX | |
190 mOhms | - 30 V, 30 V | 4.5 V | 43 nC |
| TK16A60W,S4VX | |
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| TK16J60W,S1VE | |
190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC |
| TK16N60W,S1VF | |
160 mOhms | - 30 V, 30 V | 3.7 V | 38 nC |
| TK16E60W,S1VX | |
160 mOhms | - 30 V, 30 V | 3.7 V | 30 nC |
| TK16G60W,RVQ | |
190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC |
| TK16J60W5,S1VQ | |
230 mOhms | - 30 V, 30 V | 4.5 V | 43 nC |
| TK16J60W,S1VQ | |
160 mOhms | - 30 V, 30 V | 3.7 V | 38 nC |
Opublikowano: 2020-04-06
| Zaktualizowano: 2024-11-11