Texas Instruments DRV8705S-Q1EVM Gate Driver Evaluation Module
Texas Instruments DRV8705S-Q1EVM Gate Driver Evaluation Module (EVM) is designed to evaluate the DRV8705S-Q1. The DRV8705S-Q1 is an integrated automotive-qualified brushed DC motor driver. The DRV8705S-Q1 is a highly integrated half-bridge gate driver capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages, using an integrated doubler charge pump for the high side and a linear regulator for the low side.
The Texas Instruments DRV8705S-Q1EVM has a half-bridge consisting of four N-channel MOSFETs that drive motors bi-directionally up to 15ARMS, 20A peak current. The evaluation module operates from a single power supply for the analog power and from the USB line for the digital power, which can be customized to be externally supplied. A negative 18V reverse battery protection circuit, along with a 20ARMS rated PI filter, is provided to clean up the power supply input and protect against incorrect battery connections.
Features
- H-bridge smart gate driver evaluation module for automotive applications
- –40°C to +125°C, TA temperature grade 1
- 4.9V to 37V operating range
- Doubler charge pump for 100% PWM
- Half-bridge and H-bridge control modes
- SPI interface for simple configuration
- Smart gate drive architecture
- Adjustable slew rate control
- 1.0mA to 62mA peak source current output
- 1.0mA to 62mA peak sink current output
- Integrated dead-time handshaking
- MOSFET drain to source and gate monitors
- Current shunt amplifier
- Low side sensing
- Adjustable gain settings (10, 20, 40, 80V/V)
- Integrated feedback resistors
- Integrated protection features
- Dedicated driver disable pin (DRVOFF)
- Supply and regulator undervoltage monitors
- MOSFET VDS overcurrent monitors
- MOSFET VGS gate fault monitors
- Charge pump for reverse polarity MOSFET
- Device thermal warning and shutdown
- Fault condition interrupt pin (n fault)
Board Layout
Opublikowano: 2021-05-04
| Zaktualizowano: 2025-03-11