STMicroelectronics H6/F6 Automotive P-Channel MOSFETs
STMicroelectronics H6/F6 Automotive P-Channel MOSFETs are developed using the STMicroelectronics STripFET™ H6/F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Features
- Designed for automotive applications and AEC-Q101 qualified
- Low on-resistance
- Low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Specifications
- -40VDS
- 15mΩ maximum RDS(on)
- -50A ID
Opublikowano: 2015-08-24
| Zaktualizowano: 2022-03-11