STMicroelectronics EVSTGAP2SICSANC Demonstration Board
STMicroelectronics EVSTGAP2SICSANC Demonstration Board is designed to STGAP2SICSANC isolated single gate driver and drives a half-bridge power stage with up to a 520V voltage rating. This demonstration board implements negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for SiC MOSFET. The EVSTGAP2SICSAC board components are easy to access and modify to evaluate driver performance under different application conditions easily. This demonstration board is ideal for mid and high-power inverter applications, such as motor drivers in industrial applications equipped with SiC MOSFET power switches.
Features
- Half bridge configuration, high voltage rail up to 520V
- 650V, 58mΩ typical, and 30A SCT055H65G3AG 3rd generation SiC MOSFET
- VDD logic supplied by on-board generated 3.3V or VAUX = 5V
- Negative gate driving
- 17V/0V, 17V/-3V, 19V/0V, and 19V/-3V jumper selection of driving voltage configuration
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
Opublikowano: 2023-07-14
| Zaktualizowano: 2023-07-31