Semtech SVS03331P1RBQ Low Capacitance TVS Diode
Semtech SVS03331P1RBQ Low Capacitance TVS Diode is specifically designed to provide secondary surge and ESD protection on antennas and high-speed data ports. The 2-lead 1.00mm x 0.60mm x 0.50mm DFN packaged SVS03331P1RBQ utilizes snap-back technology to minimize device clamping voltages. Each device protects one high-speed line operating at 3.3V with a capacitance of 0.37pF typical. ESD characteristics are highlighted by a high ESD withstanding voltage per IEC 61000-4-2 (±30kV contact and ±30kV air) and an extremely low dynamic resistance (0.22Ω typical). The Semtech SVS03331P1RBQ has leads that are lead-free and is qualified to AEC-Q101 for automotive applications.
Features
- High ESD withstanding voltage
- IEC 61000-4-2 (ESD) - ±30kV contact, ±30kV air
- ISO 10605 (ESD) - ±25kV contact, ±25kV air
- Small 2-lead DFN package, 1.00mm x 0.60mm x 0.50mm
- Protects one line
- Low ESD clamping voltage
- 3.3V working voltage
- 0.37pF typical low capacitance
- Low leakage current
- Low dynamic resistance
- AEC-Q101 qualified
- Solid-state silicon-avalanche technology
Applications
- Antennas
- USB 3.0/ USB 3.1/ USB Type-C®
- Automotive
- Industrial equipment
Specifications
- 80W maximum peak pulse power
- 10A maximum peak pulse current
- 3.3V maximum reverse stand-off voltage
- 6V to 11V reverse breakdown voltage range
- 50nA maximum reverse leakage current, <5nA typical
- 8V maximum clamping voltage, 5.3V typical
- 3.4V to 6.0V typical ESD clamping voltage range
- 0.22Ω typical dynamic resistance
- 0.43pF maximum junction capacitance, 0.37pF typical
- -40°C to +125°C operting/junction temperature range
Functional Schematic
Dimensions
Opublikowano: 2025-08-05
| Zaktualizowano: 2025-08-21