ROHM Semiconductor RFUH5TF6S Fast Recovery Diode
ROHM Semiconductor RFUH5TF6S Fast Recovery Diode features ultra-low switching loss and high current overload capacity. This recovery diode includes silicon epitaxial planar type construction. The RFUH5TF6S recovery diode offers 600V repetitive peak reverse voltage, 10μA reverse current, and 30A non-repetitive forward surge current. This recovery diode operates at 2.8V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH5TF6S super-fast recovery diode is ideal for use in general rectification.
Features
- Ultra-low switching loss
- High current overload capacity
- Silicon epitaxial planar type construction
- 600V repetitive peak reverse voltage
- 10μA reverse current
- 30A non-repetitive forward surge current
- 2.8V maximum forward voltage
- -55°C to 150°C storage temperature range
Applications
- General rectification
Mechanical Drawing
Opublikowano: 2021-02-26
| Zaktualizowano: 2022-03-11