ROHM Semiconductor Automotive Ignition IGBTs

ROHM Semiconductor Automotive Ignition IGBTs with low collector-emitter saturation voltage are suitable for the ignition coil and solenoid driver circuits. The IGBT transistors feature high self-clamped inductive switching energy, built-in gate-emitter protection diode, and built-in gate-emitter resistance. These IGBT transistors operate at -40ºC to 175ºC and -55ºC to 175ºC storage temperature. The devices are housed in 3-pin TO-252 and TO263S packages and are a highly reliable product for automotive.

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ROHM Semiconductor Automotive Ignition IGBTs

Features

  • Low collector-emitter saturation voltage
  • High self-clamped inductive switching energy
  • Built-in gate-emitter protection diode
  • Built-in gate-emitter resistance
  • -40ºC to 175ºC operating junction temperature
  • -55ºC to 175ºC storage temperature
  • Qualified to AEC-Q101
  • Pb-free leading plating
  • RoHS compliant

Applications

  • Ignition coil driver circuits
  • Solenoid driver circuits
View Results ( 6 ) Page
Numer części Karta charakterystyki Opis Styl mocowania Minimalna temperatura robocza Maksymalna temperatura robocza Prąd upływowy bramka–emiter
RGPR30BM40HRTL RGPR30BM40HRTL Karta charakterystyki IGBTs 400V 30A 1.6V Vce Ignition IGBT SMD/SMT - 40 C + 175 C 1.2 mA
RGPZ10BM40FHTL RGPZ10BM40FHTL Karta charakterystyki IGBTs 430V 20A 1.6V Vce Ignition IGBT SMD/SMT - 40 C + 175 C 15 uA
RGPR20NL43HRTL RGPR20NL43HRTL Karta charakterystyki IGBTs Transistor, IGBT, 430V +/- 30V, 20A SMD/SMT - 40 C + 175 C 1.2 mA
RGPR10BM40FHTL RGPR10BM40FHTL Karta charakterystyki IGBTs 430V 20A 1.6V Vce Ignition IGBT SMD/SMT - 40 C + 175 C 1.2 mA
RGPR20NS43HRTL RGPR20NS43HRTL Karta charakterystyki IGBTs 430V 20A 1.6V Vce Ignition IGBT SMD/SMT - 40 C + 175 C 1.2 mA
RGPR30NS40HRTL RGPR30NS40HRTL Karta charakterystyki IGBTs 400V 30A 1.6V Vce Ignition IGBT Through Hole - 40 C + 175 C 1.2 mA
Opublikowano: 2018-01-03 | Zaktualizowano: 2023-09-07