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Renesas Electronics TP65H015G5WS SuperGaN® FET

Renesas Electronics TP65H015G5WS SuperGaN® FET is a 650V, 15mΩ gallium nitride GaN normally-off FET that implements a Gen V SuperGaN platform. The platform employs advanced epi and patented design technologies. These Renesas TP65H015G5WS features simplify manufacturability while enhancing efficiency over silicon through a lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design defined by intrinsic lifetime tests, a wide gate safety margin, and transient overvoltage capability
  • Very low QRR
  • Reduced crossover loss
  • Easy to drive with commonly used gate drivers
  • Enables AC-DC bridgeless totem-pole PFC designs with increased power density, reduced system size and weight, and overall lower system costs
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • GSD pin layout improves high-speed design
  • Halogen-free and RoHS compliant

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor

Specifications

  • 650V drain to source voltage
  • 725V transient drain to source voltage
  • ±20V gate to source voltage
  • Continuous drain current
    • 95A at +25°C
    • 60A at +100°C
    • 600A pulsed drain current
  • 276W maximum power dissipation
  • -55°C to +150°C operating and storage temperature range
  • +260°C soldering peak temperature
  • Thermal resistance
    • 0.45°C/W junction-to-case
    • 40°C/W junction-to-ambient

Additional Resources

Typical Application

Application Circuit Diagram - Renesas Electronics TP65H015G5WS SuperGaN® FET

Simplified Half-bridge Schematic

Schematic - Renesas Electronics TP65H015G5WS SuperGaN® FET
Opublikowano: 2025-09-15 | Zaktualizowano: 2026-02-05