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onsemi NxJS3151P Single P-Channel Power MOSFETs

onsemi NxJS3151P Single P-Channel Power MOSFETs are high-performance MOSFETs designed for efficient switching applications. Housed in a compact SC-88 (SOT-363) 2mm x 2mm package, these onsemi MOSFETs offer a low RDS(on) of just 45mΩ at -4.5V, enabling reduced conduction losses and improved thermal performance. With a maximum drain current of -3.3A and a drain-source voltage rating of -12V, the NxJS3151P devices are well-suited for load switching in portable and battery-powered devices. The ultra-low gate charge and fast switching characteristics contribute to enhanced energy efficiency, making the onsemi NxJS3151P Single P-Channel Power MOSFETs ideal for space-constrained designs where power density and reliability are critical.

Features

  • Leading Trench technology for low RDS(ON) extending battery life
  • SC-88 small outline (2mm x 2mm, SC70-6 equivalent) package
  • Gate diodes for ESD protection
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Lead-free, Halogen-free/BFR-free, and RoHS compliant

Applications

  • High side load switches
  • Cell phones, computing, digital cameras, MP3s, and PDAs

Specifications

  • Off characteristics
    • -12V minimum drain-to-source breakdown voltage
    • 10mV/°C typical drain-to-source breakdown voltage temperature coefficient
    • Zero gate voltage drain currents
      • -1.0µA maximum at +25°C
      • -2.5µA typical at +125°C
    • Gate-to-source leakage currents
      • ±1.5µA maximum at ±4.5VGS
      • ±10mA maximum at ±12VGS
  • On characteristics
    • -0.40V to -1.2V gate threshold voltage range
    • 3.4mV/°C typical negative threshold temperature coefficient
    • 60mΩ to 160mΩ maximum drain-to-source on-resistance range
    • 15S typical forward transconductance
  • Charges and capacitances
    • 850pF typical input capacitance
    • 170pF typical output capacitance
    • 110pF typical reverse transfer capacitance
    • 8.6nC typical total gate charge
    • 1.3nC typical gate-to-source charge
    • 2.2nC typical gate-to-drain charge
    • 3000Ω typical gate resistance
  • Switching characteristics
    • 0.86µs typical turn-on delay time
    • 1.5µs typical rise time
    • 3.5µs typical turn-off delay time
    • 3.9µs typical fall time
  • 45mΩ (at -4.5V) to 133mΩ (at -1.8V) typical RDS(on) range
  • ±12V maximum gate-to-source voltage
  • -2.7A to -3.3A maximum continuous drain current range
  • 0.625W maximum power dissipation
  • -0.7V to -0.85V typical forward diode voltage range
  • -0.8A maximum body diode source current
  • Maximum thermal resistance
    • 200°C/W junction-to-ambient steady-state
    • 141°C/W junction-to-ambient
    • 102°C/W junction-to-lead steady-state
  • Temperatures
    • -55°C to +150°C operating junction temperature range
    • +260°C maximum lead soldering temperature

Schematic

Schematic - onsemi NxJS3151P Single P-Channel Power MOSFETs
Opublikowano: 2025-08-29 | Zaktualizowano: 2025-09-04