onsemi FFSP SiC Schottky Diodes
onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.
onsemi FFSP SiC Schottky Diodes are offered in an industry-standard TO-220-2L package. This allows designers to use them as a drop-in replacement for their Silicon counterparts, resulting in immediate gains in efficiency, as well as lower operating temperatures, with minimum system modification.
Features
- SiC provides superior switching performance and higher reliability
- High surge current capacity
- Positive temperature coefficient
- No reverse recovery
- No forward recovery
- Maximum junction temperature 175°C
- Ease of paralleling
- Industry-standard TO-220-2L package
Applications
- Power Factor Correctors (PFC)
- Industrial Power
- Solar
- EV Charger
All onsemi SiC Schottky Diodes
onsemi Silicon Carbide Schottky Diodes
No reverse recovery current, temperature-independent switching, and excellent thermal performance.
Schottky Diode Series
onsemi FFSH SiC Schottky Diodes
Silicon Carbide devices in an industry standard TO-247 package.
View Results ( 11 ) Page
| Numer części | If – prąd przewodzenia diody | Ifsm – prąd udarowy przewodzenia | Karta charakterystyki |
|---|---|---|---|
| FFSP1265A | 12 A | 70 A |  |
| FFSP0865A | 8 A | 49 A | |
| FFSP1065A | 10 A | 56 A | |
| FFSP1665A | 16 A | 90 A | |
| FFSP08120A | 8 A | 68 A | |
| FFSP15120A | 15 A | 115 A | |
| FFSP2065A | 20 A | 105 A | |
| FFSP20120A | 20 A | 135 A | |
| FFSP3065A | 30 A | 150 A | |
| FFSP1065B | 10 A | 45 A | |
Opublikowano: 2018-01-25
| Zaktualizowano: 2022-10-18