NXP Semiconductors MRFX600H Reference Circuits
NXP Semiconductors MRFX600H Reference Circuits allow rapid evaluation and prototyping of the MRFX600H RF Power Transistor. The NXP MRFX600H is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. The input and output design of the MRFX600H supports frequency use from 1.8MHz to 400MHz
Features
- MRFX600H RF Power Transistor
- Options
- 87.5MHz to 108MHz, 680W output, 21dB gain
- 230MHz, 600W output, 26dB gain
- Options
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 65VDD operation
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Performance
Applicable Products
NXP Semiconductors MRFX Series 65V LDMOS Transistors
Continuous wave RF Power transistors offering high RF output power and superior ruggedness.
Related Procuts
NXP Semiconductors RF Reference Circuits
Ease of use solutions designed to accelerate prototyping RF applications for faster time to market.
Opublikowano: 2019-11-21
| Zaktualizowano: 2023-10-19