NXP Semiconductors MRFX035H Reference Circuits
NXP Semiconductors MRFX035H Reference Circuits are designed to enable rapid evaluation and prototyping of the MRFX035H 65V RF LDMOS Transistor. The NXP MRFX035H 65V RF LDMOS Transistor is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Its input and output design supports frequency use from 1.8MHz to 512MHz.
Features
- MRFX035H 65V RF LDMOS transistor
- Qualified up to a maximum of 65VDD operation
- Characterized from 30V to 65V for extended power range
- 50Ω native output impedance
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Performance
Applicable Products
NXP Semiconductors MRFX Series 65V LDMOS Transistors
Continuous wave RF Power transistors offering high RF output power and superior ruggedness.
Related Products
NXP Semiconductors RF Reference Circuits
Ease of use solutions designed to accelerate prototyping RF applications for faster time to market.
Opublikowano: 2019-11-21
| Zaktualizowano: 2023-10-19