Nexperia PSMN N-Channel 30V MOSFETs
Nexperia PSMN N-Channel 30V MOSFETs feature NextPowerS3 technology that delivers low RDSon and low IDSS leakage in an LFPAK package. The LFPAK package provides high reliability and is qualified for 175°C. These MOSFETs include best-in-class Safe Operating Area (SOA). The PSMN MOSFETs have low leakage of less than 1μA at 25°C and are optimized for 4.5V gate drive. These MOSFETs feature -55°C to 175°C, both junction temperature and storage temperature. The Nexperia PSMN MOSFETs are ideal for hot-swap, power OR-ing, battery protection, brushed and BLDC motor control, and synchronous rectification in AC-DC and DC-DC applications.
Features
- Optimized for low RDSon
- NextPowerS3 technology
- Best-in-class SOA
- < 1µA low leakage at 25°C
- High-reliability LFPAK package qualified to 175°C
- Exposed leads for visual solder inspection
- Low spiking and ringing for low EMI designs
Specifications
- Optimized for 4.5V gate drive
- -55°C to 175°C storage temperature range
- -55°C to 175°C junction temperature range
- At 25°C ≤ Tj ≤ 175°C:
- 30VDS drain-source voltage
- 30VDGR drain-gate voltage
Applications
- Hot-swap
- Power OR-ing
- DC switch / Load switch
- Battery protection
- Brushed and brushless motor control
- Synchronous rectification in AC-DC and DC-DC applications
Power OR-ing Application Diagram
Videos
Related Products
Nexperia NextPowerS3 MOSFETs
High-performance 25V, 30V, and 40V MOSFET platform using superjunction technology.
Opublikowano: 2019-08-27
| Zaktualizowano: 2023-05-02