Powrót do: Nexperia

Nexperia PMN50EPE 30V P-Channel Trench MOSFET

Nexperia PMN50EPE 30V P-Channel Trench MOSFET implements trench MOSFET technology in a small SOT457 (SC-74) SMD plastic package. The PMN50EPE enhancement mode Field-Effect Transistor (FET) is logic-level compatible, very fast switching, and has 2kV HBM Electrostatic Discharge (ESD) protection.

The Nexperia PMN50EPE MOSFET is ideal for relay drivers, high-speed line drivers, high-side load switches, and switching circuit applications.

Features

  • Trench MOSFET technology
  • Logic-level compatible
  • Very fast switching
  • ElectroStatic Discharge (ESD) protection >2kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Pinning Diagrams

Location Circuit - Nexperia PMN50EPE 30V P-Channel Trench MOSFET
Opublikowano: 2025-06-25 | Zaktualizowano: 2026-04-17